In summary, the characteristics and performance of the SiGe nanowire MOSFET with core-shell structure have been studied in this paper by solving the Poisson’s equation and the Schrödinger’s Equation self-consistently, coupled to the channel carrier transport equation. The energy band and the wave functions are analyzed first, followed by the study of the drain current characteristics and gate capacitance. It is shown how the quantum mechanical effects and different combinations of RSi and RGe affect the micro electron energy levels, carrier distribution and the macro channel current transport. All these provide useful results for the device engineers about how to design and optimize the performance of the SiGe nanowire MOSFET with core-shell structure for the beyond 10nm generation integrated circuit application.