CMOS Diodes Operating Beyond Avalanche Frequency

Talal Al-Attar
Santa Clara University


Abstract

This paper describes IMPATT diodes designed and fabricated in 0.25┬Ám CMOS technology to operate beyond avalanche frequency. IMPATT Impedance measurements from 40MHz to 110GHz confirmed avalanche frequency range from 30GHz to 55GHz and negative resistance tuning range from 30GHz to 80GHz. G&H model is verified and the impact of different device parameters are presented.