Electrical Modeling and Analysis of 3D Synaptic Array using Vertical RRAM Structure

Hongyu An1, M. Amimul Ehsan1, zhen zhou2, Yang Yi1
1University of Kansas, 2Intel Corporation


Three-dimensional (3D) integrated circuits (ICs) offer a promising near-term solution for pushing beyond Moore’s Law because of their compatibility with current technology while providing high system speed, high density, massively parallel processing, low power consumption, and a small footprint. In this paper, a novel 3D neuromorphic IC architecture combining monolithic 3D integration and vertical resistive random-access memory (V-RRAM) technology is proposed. Furthermore, a concise equivalent circuit model of the proposed structure is created, moreover the analytical calculation for each parameter in the equivalent circuit is provided. The electrical performance is evaluated through SPICE simulations