Session 5B

1:00pm - 3:05pm


Reliability Analysis



Jayasimha Prasad, Micrel Semiconductor

Olof Tornblad, Infineon






5B-1            Statistical Modeling for Circuit Simulation (Invited), Colin McAndrew, Motorola, Tempe, AZ      



5B-2            Electrostatic Discharge Implantation to Improve Machine-Model ESD Robustness of Stacked NMOS in Mixed-Voltage I/O Interface Circuits,   Ming-Dou  Ker, Hsin-Chyh Hsu, Jeng-Jie Peng1, National Chiao-Tung University, Taiwan and 1Industrial Technology Research Institute, Taiwan



5B-3            Coupled Simulation of Circuit and Piezoelectric Laminates, Chenggang Xu, Terri Fiez, Kartkeya Mayaram, Oregon State University, Corvallis, OR  



5B-4            Investigation of the Capacitance Deviation Due to Metal-Fills and the Effective Interconnect Geometry Modeling, Won-Seok Lee, Keun-Ho Lee, Jin-Kyu Park, Tae-Kyung Kim, Young-Kwan Park, Jeong-Taek Kong, Samsung Electronics Co., Ltd., Kyunggi-do, Korea 



5B-5    Static Electromigration Analysis for Signal Interconnects, David Blaauw, Vladimir Zolotov1, Chanhee Oh1, Murat Becer1, Rajendran Panda1, University of Michigan, Ann Arbor, MI and 1Motorola Inc., Austin, TX


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