Tests on Symmetry and Continuity between BSIM4 and BSIM5

Xudong Niu
Peking University


This paper presents the test results on the CMOS model symmetry and continuity characteristics between BSIM4 and BSIM5 from University of California at Berkeley. It is shown that the industry standard model BSIM4 has a series of the shortcomings of the continuity and symmetry, such as the charge, high-order current derivatives, and the trans-capacitances while new generation BSIM MOSFET compact model, BSIM5, demonstrates all necessary continuity and symmetry characteristics, which are very important for Analog and RF circuit design.