Effect of NDD Dosage on Hot-Carrier Reliability in DMOS Transistors

Jone F. Chen1,  Kuen-Shiuan Tian1,  Shiang-Yu Chen1,  Kuo-Ming Wu2,  C. M. Liu2
1National Cheng Kung University, 2Taiwan Semiconductor Manufacturing Company


The hot-carrier reliability of high-voltage n-channel DMOS transistors with various dosage of n-type double diffusion (NDD) implant is investigated. Higher NDD dosage results in higher substrate current, however, on-resistance (Ron) degradation is lower. TCAD simulation suggests that hot-hole injection and trapping is responsible for this unexpected lower Ron degradation.