New SRAM Design Using Body Bias Technique for Ultra Low Power Applications

Fasrhad Moradi1,  Dag Wisland2,  Hamid Mahmoodi3,  Yngvar Berg2,  Cao Tuan Vu2
1Purdue University ( University of Oslo), 2University of Oslo, 3SanFrancisco State University


Abstract: A new SRAM design is proposed. By body biasing, the static noise margin (SNM) is improved by at least 15% compared to the standard cells. Through using this technique, lowering supply voltage is possible. This SRAM cell is working under 0.3V supply voltage offering a SNM improvement of 22% for the read cycle. Write Margin is not affected due to using body biasing technique. 65nm ST models are used for simulations.