Abstract: A new SRAM design is proposed. By body biasing, the static noise margin (SNM) is improved by at least 15% compared to the standard cells. Through using this technique, lowering supply voltage is possible. This SRAM cell is working under 0.3V supply voltage offering a SNM improvement of 22% for the read cycle. Write Margin is not affected due to using body biasing technique. 65nm ST models are used for simulations.