In this paper, a nine-transistor (9T) Static Random Access Memory (SRAM) bitcell for the low voltage energy constraint application is proposed. It is well known that in subthreshold regime, reliability and process variations are the main design challenges, and standard six-transistor (6T) SRAM cell fails to operate in sub-VTH. The proposed design has better read stability and improved process variation tolerant as compared to standard 6T SRAM. Simulation results based on 32nm technology node shows that there is 37%improvement in the read stability as compared to standard 6T SRAMbitcell. The proposed design also address the conflicting read and write requirements, therefore, one can optimize the read static noise margin (SNM), write noise margin and write speed for a particular application by selecting the cell ratios for read and write operations.