An 160Kb SRAM macro with ultra-low leakage Deep Standby mode is fabricated in 40nm embedded Flash process with newly developed 0.394um2 memory-cell, which can operate up to 170deg.C for automotive application. Raising source of pull-down memory-cell MOS and floated digit lines leads to drastic reduction of memory-cell leakage, and separating memory-cell power line from peripheral one enables complete cutoff of peripheral leakage. The leakage power is 1.86uW/Mbits at 25deg.C. As a result, standby leakage of total 11.1 Mbits embedded SRAM in the MCU can be cut 88% at 170deg.C.