Nonlinear Delay-Table Approach for Full-Chip NBTI Degradation Prediction

Song Bian, Michihiro Shintani, Shumpei Morita, Masayuki Hiromoto, Takashi Sato
Kyoto University


As technology further scales semiconductor devices, aging-induced device degradation has become one of the major threats to device reliability. Hence, taking aging-induced degradation into account during the design phase can greatly improve the reliability of the manufactured devices. However, considering instance-dependent Vth degradations for extremely large circuits, like processors, is time-consuming. In this research, we focus on the negative bias temperature instability (NBTI) as the aging-induced degradation mechanism, and propose a fast and efficient way of estimating NBTI-induced delay degradation by utilizing static-timing analysis (STA) and simulation-based lookup table (LUT). Probability-based delay model (PBDM) for each gate is characterized in advance, having input slews, output capacitances and signal probabilities as the table indices. Using the PBDM modeled, path delays of arbitrary circuits can be efficiently estimated. With a typical five-stage pipelined processor as the design target, by comparing the calculated delay from LUT with the reference delay calculated by a commercial circuit simulator, we achieved 4114 times speedup within 5.6% delay error.